Semi-conducting GaAs n–type

  • VGF growing method is used,
  • Si doped,
  • 2″, 3″ and 4″ ingots,
  • 2″, 3″ and 4″ polished wafers,
  • atypical shapes available,
  • test grade wafers available;
VGF Semi-conducting n–type wafers
Dopant Si
Carrier concentration 1 x 1016 – 2 x 1018 cm-3 other upon request
Crystal orientation (100) ± 0.25° (110), (111) also available
Off orientation up to 10°
Resistivity > 1 x 10-3 Ωcm
Hall mobility > 1500 cm2V-1s-1
Flat orientation SEMI or EJ standard other upon request
Surface treatment single side polish as cut or lapped also available
Front side polished
Back side lapped/etched polished upon request
Packaging Empak, Fluoroware, Ultrapak
Test grade wafers available

 

Diameter 50.8 ± 0.1 76.2 ± 0.1 100 ± 0.1 mm other upon request
Thickness 450 ± 20 625 ± 25 625 ± 25 µm other upon request
Etch pit density < 5000 < 5000 < 5000 cm-2